SHEHAB, A. A.; 						AL-LAMY, H. Kh.; 						MUSTAFA, M. H..
 Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction.
<strong>Ibn AL- Haitham Journal For Pure and Applied Science</strong>, [S.l.], v. 24, n. 1, dec. 2016.
ISSN 2521-3407.
Available at: &lt;<a href="http://jih.uobaghdad.edu.iq/index.php/j/article/view/820" target="_new">http://jih.uobaghdad.edu.iq/index.php/j/article/view/820</a>&gt;. Date accessed: 01 dec. 2019.