SHEHAB, A. A.; AL-LAMY, H. Kh.; MUSTAFA, M. H. Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction. Ibn AL-Haitham Journal For Pure and Applied Sciences, Baghdad, Iraq., v. 24, n. 1, 2016. Disponível em: https://jih.uobaghdad.edu.iq/index.php/j/article/view/820. Acesso em: 25 mar. 2025.