[1]
A. A. Shehab, H. K. Al-Lamy, and M. H. Mustafa, “Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction”, IHJPAS, vol. 24, no. 1, Dec. 2016, Accessed: Mar. 25, 2025. [Online]. Available: https://jih.uobaghdad.edu.iq/index.php/j/article/view/820