Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

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Sarmad M. M. Ali
Alia A.A. Shehab
Samir A. Maki

Abstract

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

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How to Cite
M. Ali, S. M., Shehab, A. A., & Maki, S. A. (2018). Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation. Ibn AL- Haitham Journal For Pure and Applied Sciences, 31(3), 20–25. https://doi.org/10.30526/31.3.2023
Section
physics