Study the Effect of Zn Doping in the Structural and Electrical Properties of CdTe Thin Films

Abstract

Some of structural ,and electrical properties of pure and zinc (Zn) doped cadmium telluride thin films with impurity percentages (0.5, 1, 1.5)%, deposited on hot glass substrate (temperature equals to 423K) of  thickness of 300nm and rate deposition of 0.5 nm.s-1  by thermal co-evaporation technique under vacuum of (2×10-5)Torr have been investigates. The structural properties for the prepared films were studied before and after. doping process by analysis of the X-ray diffraction, and it appeared that pure and dopant  CdTe thin films are polycrystalline and have the cubic structure with preferential orientation in the [111] direction, and the crystal structure of the films were improved due to doping process. From d.c.electrical conductivity in range of (291-495)K, we noticed that there are two activation energies Ea1 and Ea2, and their values decrease with the..increase.of.Zn.percentages,so..(σd.c.)..of..those..thin.films.increase . From Hall.effect. measurements we showed that the..(σd.c.).. for CdTe thin film is of n-type and converted to p-type when they adopted with Zn, and charge carrier concentration increases with the increase of Zn percentages, so Hall mobility (μH) decreases