A Theoretical Study of Charge Transport y at Au/ ZnSe and Au/ZnS Interfaces Devices

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Hadi J. M. Al-Agealy
Mohsin A.H. Hassoni
Mudhar Sh. Ahmad
Rafah I. Noori
Sarab S. Jheil

Abstract

  A quantum mechanical description of the dynamics of  non-adiabatic electron transfer in metal/semiconductor interfaces  can be achieved using simplified models  of the system. For this system we can suppose two localized quantum states donor state |D› and acceptor state |A› respectively. Expression of rate constant of electron transfer for metal/semiconductor system derived upon quantum mechanical model and perturbation theory for transition between |ð·âŒª and |ð´âŒª state when the coupling matrix element coefficient is smaller than 0.025eV. The rate of electron transfer for  Au/ ZnSe and Au/ZnS interface systems is evaluated with orientation free energy using a Matlap program. The results  of the electron transfer rate constant are calculated for our modeas well as with experimental results

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How to Cite
Al-Agealy, H. J. M., Hassoni, M. A., Ahmad, M. S., Noori, R. I., & Jheil, S. S. (2017). A Theoretical Study of Charge Transport y at Au/ ZnSe and Au/ZnS Interfaces Devices. Ibn AL- Haitham Journal For Pure and Applied Sciences, 27(1), 176–187. Retrieved from https://jih.uobaghdad.edu.iq/index.php/j/article/view/376
Section
physics