Preparation and Annealing Effects on the Structural and Optical Properties of ZnTe Thin Film
DOI:
https://doi.org/10.30526/39.2.4227Keywords:
Chalcogenide semiconductors, X- ray diffraction (XRD), Atomic Force Microscopy (AFM), Band gaps ZnTe, Thin filmAbstract
ZnTe possesses the proper optoelectronic properties as a candidate for device development. The structure and optical properties of ZnTe semiconductor thin films of 500 nm were studied using thermal evaporation technique. The influence of annealing temperatures on ZnTe thin films in the range ( R.T - 473 K). XRD and surface morphological analyses are used to examine the films. The ZnTe films are comparatively polycrystalline and cubic in phase, according to the XRD analysis. with a lattice constant of 0.61 nm upon an (111) orientation. The intensities of all the peaks rapidly increase though they show the same tendencies; it shows the crystallinity of the films becomes higher crystal size diameters (from 8.41 to 12.18nm) both increase as the temperature of annealing increases. The transmittance data within the wavelength range of 400–1000 nm was employed to calculate the optical absorption coefficient (α) of the films. We have calculated the real and imaginary parts of the dielectric constant, the extinction coefficient, and the refractive index as a function of wavelength, and our results demonstrate that the optical energy band gap of telried zinc The thin film drops from 2.15 eV to 2.02 eV as the annealing temperature rises
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