Comparison I-V Characteristics of Sb/c-Si and Al/c-Si Junction
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Abstract
Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25µm), with rate of deposition equals to 2.77 Å/sec, all samples are annealed in a vacuum for one hour at 473K. The tests have shown that all the films have polycrystalline structure for all Sb films. The barrier heights in (Sb/c-Si) junction was found to be equal 0.825eV, but(Al/c-Si) junction ohmic contact. Current-voltage measurements confirm this behaviour.
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How to Cite
[1]
Hachim, F.G. et al. 2017. Comparison I-V Characteristics of Sb/c-Si and Al/c-Si Junction. Ibn AL-Haitham Journal For Pure and Applied Sciences. 26, 1 (Apr. 2017), 153–158.
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Physics
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