Comparison I-V Characteristics of Sb/c-Si and Al/c-Si Junction

Main Article Content

Fatin G. Hachim
Ramiz A. Al-Ansari
Hussein Kh. AL-Lamy

Abstract

  Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25µm), with rate of deposition equals to 2.77 Ã…/sec, all samples are annealed in a vacuum for one hour at 473K. The tests have shown that all the films have polycrystalline structure for all Sb films. The barrier heights in (Sb/c-Si) junction was found to be equal 0.825eV, but(Al/c-Si) junction ohmic contact. Current-voltage measurements confirm this behaviour.

Article Details

How to Cite
[1]
Hachim, F.G. et al. 2017. Comparison I-V Characteristics of Sb/c-Si and Al/c-Si Junction. Ibn AL-Haitham Journal For Pure and Applied Sciences. 26, 1 (Apr. 2017), 153–158.
Section
Physics

Publication Dates