Investigation of the Structural, Optical and Electrical Properties of AgInSe2 Thin Films

Abstract

  The Silver¹Indium¹Selenide (AgInSe₂) (AIS) thin¹films of (300¹Â±20) nm thickness  have been¹prepared²from the compound alloys²using thermal evaporation² technique onto the glass²substrate at room temperature, with a deposition rate²(3±0.1) nm²sec^-1.

The²structural, optical and electrical³properties have been studied³at different annealing³temperatures (Ta=450, 550 and 650) K.

The amount³or (concentration) of the elements³(Ag, In, Se) in the  prepared alloy³was verified using  an energy dispersive³x-ray spectrometer (EDS)³technology. X-ray diffraction³analysis shows that AIS alloy  prepared as (powder) and the thin films³are polycrystalline  of tetragonal³structure with preferential orientation³(112). The crystalline³size increases  as a function³of annealing temperature. The atomic force³microscope (AFM) technique  was used to examine³the  topography  and  estimate³the surface roughness, also the  average grain³size of the films. The results show³that the grain size increases³with annealing³temperature.

  The optical⁴band gap of the films lies⁴in the range 1.6-1.9 eV. The films⁴appear to be⁴n-type indicating that the electrons⁴as a dominant charge⁴carrier. The electrical conductivity⁴increases  with a corresponding⁴increase in annealing⁴temperature.