Characterization of n-CdO:Mg /p-Si Heterojunction Dependence on Annealing Temperature

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Bushra Kadhim Hassoon Al-Maiyaly

Abstract

In this research, thin films of CdO: Mg and n-CdO: Mg/ p-Si heterojunction with thickness (500±50) nm have been deposited at R.T (300 K) by thermal evaporation technique. These samples have been annealed at different annealing temperatures (373 and 473) K for one hour. Structural, optical and electrical properties of {CdO: Mg (1%)} films deposited on glass substrate as a function of annealing temperature are studied in detail. The C-V measurement of n-CdO: Mg/ p-Si heterojunction (HJ) at frequency (100 KHz) at different annealing temperatures have shown that these HJ were of abrupt type and the builtin potential (Vbi) increase as the annealing temperature increases. The I-V characteristics of heterojunction prepared under dark case at different annealing temperatures show that the values of ideality factor and potential barrier height increase with the increase of annealing temperature.

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How to Cite
Characterization of n-CdO:Mg /p-Si Heterojunction Dependence on Annealing Temperature. (2017). Ibn AL-Haitham Journal For Pure and Applied Sciences, 29(3), 14-25. https://jih.uobaghdad.edu.iq/index.php/j/article/view/8
Section
Physics

How to Cite

Characterization of n-CdO:Mg /p-Si Heterojunction Dependence on Annealing Temperature. (2017). Ibn AL-Haitham Journal For Pure and Applied Sciences, 29(3), 14-25. https://jih.uobaghdad.edu.iq/index.php/j/article/view/8